SI3447DV vishay siliconix document number: 70819 s-59646?rev. a, 28-sep-98 www.vishay.com 2-1 p-channel 1.8-v (g-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) 0.050 @ v gs = - 4.5 v 5.2 -12 0.070 @ v gs = - 2.5 v 4.4 0.095 @ v gs = - 1.8 v 3.8 (4) s (3) g (1, 2, 5, 6) d p-channel mosfet tsop-6 top view 6 4 1 2 3 5 2.85 mm 3 mm absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds -12 v gate-source voltage v gs 8 v continuous drain current (t j = 150 c) a, b t a = 25 c i d 5.2 c on ti nuous d ra i n c urren t (t j = 150 c) a , b t a = 70 c i d 4.1 a pulsed drain current i dm 20 a continuous source current (diode conduction) a, b i s - 1.7 maximum power dissipation a, b t a = 25 c p d 2.0 w maximum power dissipation a, b t a = 70 c p d 1.3 w operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction to ambient a t 5 sec r 62.5 c/w maximum junction-to-ambient a steady state r thja 106 c/w notes a. surface mounted on fr4 board. b. t 5 sec.
SI3447DV vishay siliconix www.vishay.com 2-2 document number: 70819 s-59646?rev. a, 28-sep-98 specifications (t j =25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 0.45 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na zero gate voltage drain current i dss v ds = - 9.6 v, v gs = 0 v -1 a zero gate voltage drain current i dss v ds = - 9.6 v, v gs = 0 v, t j = 70 c -5 a on-state drain current a i d(on) v ds -5 v, v gs = - 4.5 v -15 a v gs = - 4.5 v, i d = - 5.2 a 0.040 0.050 drain-source on-state resistance a r ds(on) v gs = - 2.5 v, i d = - 4.4 a 0.056 0.070 ds(on) v gs = - 1.8 v, i d = - 2.0 a 0.072 0.095 forward transconductance a g fs v ds = - 10 v, i d = - 5.2 a 15 s diode forward voltage a v sd i s = - 1.7 a, v gs = 0 v 0.7 - 1.2 v dynamic b total gate charge q g 16 25 gate-source charge q gs v ds = - 6 v, v gs = - 4.5 v, i d = - 5.2 a 3.5 nc gate-drain charge q gd 2.5 turn-on delay time t d(on) 20 40 rise time t r v dd = - 6 v, r l = 10 45 90 turn-off delay time t d(off) v dd = - 6 v , r l = 10 - 1 a, v gen = - 4.5 v, r g = 6 100 200 ns fall time t f 75 150 source-drain reverse recovery time t rr i f = - 1.7 a, di/dt = 100 a/ s 60 100 notes a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2%.
SI3447DV vishay siliconix document number: 70819 s-59646?rev. a, 28-sep-98 www.vishay.com 2-3 typical characteristics (25 c unless noted) 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.00 0.04 0.08 0.12 0.16 0.20 048121620 0 4 8 12 16 20 01234 0 1 2 3 4 5 0 4 8 12 16 0.75 1.00 1.25 1.50 - 50 - 25 0 25 50 75 100 125 150 0 500 1000 1500 2000 2500 036912 v gs = 5 thru 3 v 25 c t c = - 55 c c rss c oss c iss v ds = 6 v i d = 5.2 a v gs = 4.5 v i d = 5.2 a v gs = 4.5 v v gs = 2.5 v 2.5 v 2 v 125 c 1.5 v output characteristics transfer characteristics gate charge on-resistance vs. drain current v ds - drain-to-source voltage (v) - drain current (a) i d v gs - gate-to-source voltage (v) - drain current (a) i d - gate-to-source voltage (v) q g - total gate charge (nc) v ds - drain-to-source voltage (v) c - capacitance (pf) v gs - on-resistance ( r ds(on) ) i d - drain current (a) capacitance on-resistance vs. junction t emperature t j - junction temperature ( c) (normalized) - on-resistance ( r ds(on) ) v gs = 1.8 v
SI3447DV vishay siliconix www.vishay.com 2-4 document number: 70819 s-59646?rev. a, 28-sep-98 typical characteristics (25 c unless noted) 0.00 0.25 0.50 0.75 1.00 1.25 1.50 source-drain diode forward v oltage on-resistance vs. gate-to-source voltage threshold v oltage single pulse power - on-resistance ( r ds(on) ) v sd - source-to-drain voltage (v) v gs - gate-to-source voltage (v) - source current (a) i s t j - temperature ( c) 0.00 0.04 0.08 0.12 0.16 0.20 012345 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 t j = 150 c t j = 25 c i d = 5.2 a i d = 250 a variance (v) v gs(th) 20 1 10 10 -3 10 -2 1 10 600 10 -1 10 -4 100 0.01 0 1 10 25 5 10 600 0.1 15 20 100 normalized thermal transient impedance, junction-to-ambient 2 1 0.1 0.01 normalized effective transient thermal impedance time (sec) power (w) 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 1. duty cycle, d = 2. per unit base = r thja = 106 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm square wave pulse dureation (sec)
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